The effects of quantum well width, doping concentration, barrier width and height on RTD I-V characteristics are analyzed in details.
对量子阱宽度、掺杂浓度、势垒宽度和高度对RTD的I-V特性的影响进行了详细的分析。
Compared with the K-P method, it is found that the results of two methods are accordance with the increase of the barrier width.
此法比k - P方法简便易行，而且随着势垒宽度的增加，两种方法所得结果趋于一致。
During fracturing of thin layer with high stress difference of reservoir and restraining barrier, height and width of fracture will decrease compared to thick layer.
储隔层应力差较大的薄层压裂过程中，缝高、缝宽相对于厚层变小。
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