It is found that the barrier width is thinned by the surface defects with high density to enhance the hot electron tunneling.
发现表面高密度缺陷减薄了势垒层厚度，显著增强了热电子隧穿过程。
The effects of quantum well width, doping concentration, barrier width and height on RTD I-V characteristics are analyzed in details.
对量子阱宽度、掺杂浓度、势垒宽度和高度对RTD的I-V特性的影响进行了详细的分析。
The results showed that the effective barrier width and area of the junction with the rough interfaces were smaller than those of the junction with the smooth interfaces.
结果表明，与界面光滑的结比较，界面粗糙的结的有效势垒宽度较窄，有效势垒面积较小。
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