... voltage response time 电压反应时间 voltage saturation current 电压饱和电流 voltage saturation 电压饱和 ...
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DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.
本文首先建立了一个SOI MOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。
Features: Low saturation voltage, excellent dependence of hFE on current, fast switching time.
特点：低饱和压降，电流放大线性好，开关速度快。
Features: High DC current gain, excellent hFE linearity, low saturation voltage.
特点：直流电流增益高，放大线性好，饱和压降低。
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