DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.
本文首先建立了一个SOIMOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。
Features: Low saturation voltage, excellent dependence of hFE on current, fast switching time.
特点：低饱和压降，电流放大线性好，开关速度快。
Features: High DC current gain, excellent hFE linearity, low saturation voltage.
特点：直流电流增益高，放大线性好，饱和压降低。
Features: High DC current gain and excellent hFE linearity, low saturation voltage.
特点：直流电流增益高，放大线性好，饱和压降低。
Features: Low saturation voltage, large current capacity and wide ASO.
特点：饱和压降低，电流容量大和安全工作区宽。
Features: high current, low saturation voltage, low on resistance, high hFE.
特征：大电流，饱和压降低，输入阻抗低，直流电流增益高。
Features: high DC current gain, low saturation voltage, high col lector power dissipation.
特点：高直流电增益，饱和压降低，高集电极。
Features: Low saturation voltage, large collector current.
特点：低饱和，大电流。
Features: Low saturation voltage, excellent DC current gain characteristics.
特点：饱和压降低，直流电流放大线性好。
Features: Low saturation voltage, excellent DC current gain characteristics.
特点：饱和压降低，直流电流放大线性好。
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