Standard Test Method for dielectric breakdown voltage and dielectric strength of D149 ASTM solid electrical insulating materials at industrial power frequencies.
ASTM D149固体电绝缘材料在工业电源频率下的介电击穿电压和介电强度的试验方法。
The application of ADI and high-order compact finite difference method to the breakdown voltage analysis of thin film SOI RESURF structure.
采用ADI与高阶紧致差分相结合的方法计算薄膜soi RESURF结构击穿电压。
The invention provides an LDMOS device capable of improving breakdown voltage and a manufacturing method thereof.
本发明提供了一种可提高击穿电压的LDMOS器件及其制造方法。
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