Standard Test Method for dielectric breakdown voltage and dielectric strength of D149 ASTM solid electrical insulating materials at industrial power frequencies.
ASTM D149固体电绝缘材料在工业电源频率下的介电击穿电压和介电强度的试验方法。
The application of ADI and high-order compact finite difference method to the breakdown voltage analysis of thin film SOI RESURF structure.
采用ADI与高阶紧致差分相结合的方法计算薄膜soiRESURF结构击穿电压。
The invention provides an LDMOS device capable of improving breakdown voltage and a manufacturing method thereof.
本发明提供了一种可提高击穿电压的LDMOS器件及其制造方法。
Test method for ASTM D149 solid electrical insulating materials at commercial power frequencies the dielectric breakdown voltage and dielectric strength.
ASTM D149固体电绝缘材料在工业电源频率下的介电击穿电压和介电强度的试验方法。
At present, many effective solutions have been given for the first question. But, there's no any method to reduce the influence of surface states and interfacial layer on breakdown voltage.
针对第一个问题，国内外已提出很多从结构上解决的方案且得到有效应用，如何减少表面态和界面层的影响仍没有找到比较好的解决方法。
At present, many effective solutions have been given for the first question. But, there's no any method to reduce the influence of surface states and interfacial layer on breakdown voltage.
针对第一个问题，国内外已提出很多从结构上解决的方案且得到有效应用，如何减少表面态和界面层的影响仍没有找到比较好的解决方法。
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