估算后发现，夹在沟槽栅（Trench Gate）之间的台面部分宽度（以下称为台面宽度）从3μm微细化至0.6μm后，在集电极（Collector）与发射极（Emitter）间电压相同的情况下...
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trench-gate field-stop 沟槽式场截止 ; 沟栅式场截止型
Using new trench-gate technology 使用新沟道门技术
trench-gate 槽栅
trench gate IGBT 沟槽栅IGBT
Using trench-gate technology 使用沟道门技术
trench-gate bipolar-mode JFET 槽栅双极模式JFET
Cellular trench-gate field-effect transistors 发明名称
Gate trench 栅极沟槽
The trench gate extends along a longitudinal direction.
所述沟槽栅极沿纵向延伸。
The width of the trench gate is not uniform along the longitudinal direction;
所述沟槽栅极的宽度沿所述纵向不一致；
The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33).
所述半导体器件还包括沟槽栅极(32)，其通过绝缘层(33)面对部分所述中间区。
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