The trench gate extends along a longitudinal direction.
所述沟槽栅极沿纵向延伸。
The width of the trench gate is not uniform along the longitudinal direction;
所述沟槽栅极的宽度沿所述纵向不一致；
The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33).
所述半导体器件还包括沟槽栅极(32)，其通过绝缘层(33)面对部分所述中间区。
At least one conductive shield electrode is disposed in the gate trench.
至少一个置于所述栅沟槽中的导电保护电极；
A metal gate may be formed in the trench having a modified profile.
金属栅极可以形成在具有修正轮廓的沟槽中。
In a trench-gated MIS device, contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench.
在一种沟槽栅极型MIS器件中，在沟槽中形成与栅极的接触，从而消除了使栅极材料，通常为多晶硅，延伸至沟槽外的需要。
In a trench-gated MIS device, contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench.
在一种沟槽栅极型MIS器件中，在沟槽中形成与栅极的接触，从而消除了使栅极材料，通常为多晶硅，延伸至沟槽外的需要。
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