On account of mire interfere technology, fixed position and refraction index vary distribution of stripe of phase object has been analyzed, and give the important conclusions.
本文应用干涉度量的理论，分析了相位物体漫射照明度量中的条纹定域以及折射率变化的分布，给出了几个重要结论。
Using a new kind of liquid-phase epitaxy technology, V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated.
采用一种新的液相外延工艺，研制出了具有大光胶结构的V型槽衬底内条形可见光发射半导体激光器。
We also discuss the phase diagram, the stripe antiferromagnetic state and the spin fluctuations in this system.
我们也分析了体系的基态相图、条纹反铁磁态和自旋涨落。
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