Using a new kind of liquid-phase epitaxy technology, V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated.
采用一种新的液相外延工艺，研制出了具有大光胶结构的V型槽衬底内条形可见光发射半导体激光器。
We also discuss the phase diagram, the stripe antiferromagnetic state and the spin fluctuations in this system.
我们也分析了体系的基态相图、条纹反铁磁态和自旋涨落。
We also discuss the phase diagram, the stripe antiferromagnetic state and the spin fluctuations in this system.
我们也分析了体系的基态相图、条纹反铁磁态和自旋涨落。
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