All of the designs based on SMIC0.18um standard CMOS process. All of the designs are simulated in CADENCE environment.
所有设计基于SMIC0.18um标准CMOS工艺,采用在CADENCE环境下对运放进行了仿真,得到了满意的仿真结果。
参考来源 - CMOS高性能运算放大器研究与设计·2,447,543篇论文数据,部分数据来源于NoteExpress
This circuit structure is simple and can be realized by the standard CMOS process easily.
该电路结构简单,易于实现,且制作工艺与标准CMOS工艺完全兼容。
These capabilities are not available in standard CMOS and provide a dramatic improvement in performance over traditional sub-volt design approaches.
这些功能在标准CMOS里不可使用,显着改善了传统亚伏设计方法。
Magnetic micro inductor is a new kind of on-chip device, which has a better characteristic, and is compatible with the standard CMOS IC fabrication technology.
磁介质微电感是一种新的片上器件,拥有较高的电感性能,并能够与标准CMOS IC工艺兼容。
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