A mathematical model of the I-V characteristics of single-electron transistors (SET's) is improved based on the orthodox single-electron theory.

基于正统单电子理论，提出了单电子晶体管的I - V特性数学算法改进模型。

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Most of the fabrication methods of silicon single-electron transistors can be perfectly compatible with the si complementary metal-oxide-semiconductor (CMOS) technology.

大多数硅基单电子晶体管的制备方法可以很好地与主流的CMOS工艺兼容。

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The structures, principles, characters and applications of single electron transistors are clarified, based on the traditional theories.

基于传统单电子理论，阐述了单电子晶体管的结构、原理、特点及应用。

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Konstantin Likharev, at the State University of New York at Stony Brook, a co-inventor of the single-electron transistor, is working on ways to combine it with conventional transistors to make super-dense memory chips.

ECONOMIST: The transistor��s heir