A mathematical model of the I-V characteristics of single-electron transistors (SET's) is improved based on the orthodox single-electron theory.
基于正统单电子理论，提出了单电子晶体管的I - V特性数学算法改进模型。
Most of the fabrication methods of silicon single-electron transistors can be perfectly compatible with the si complementary metal-oxide-semiconductor (CMOS) technology.
大多数硅基单电子晶体管的制备方法可以很好地与主流的CMOS工艺兼容。
The structures, principles, characters and applications of single electron transistors are clarified, based on the traditional theories.
基于传统单电子理论，阐述了单电子晶体管的结构、原理、特点及应用。
The structures, principles, characters and applications of single electron transistors are clarified, based on the traditional theories.
基于传统单电子理论，阐述了单电子晶体管的结构、原理、特点及应用。
应用推荐