As CMOS IC fabrication technology continuously progresses toward sub-0.1μm nodes, the self-aligned silicide (SALICIDE) material and technology also require corresponding innovations.
随着CMOS集成电路制造技术持续向亚0.1μm工艺推进,与之相应的自对准硅化物(SALICIDE)材料和工艺也在不断发展创新。
参考来源 - 用于亚0.1μmCMOS器件技术中的镍硅化物研究·2,447,543篇论文数据,部分数据来源于NoteExpress
以上来源于: WordNet
N any one of a class of binary compounds formed between silicon and certain metals 硅化物
Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.
其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。
The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.
半导体结型二极管包括硅,所述硅与硅化物相接触时结晶化。
The results show that the MOSFETs, with higher doping, thicker si film and silicide, have lower parasitic bipolar gain.
提高体区掺杂浓度、增加硅膜和硅化物厚度能够减小增益。
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