The polysilicon tiles (14.1, 14.2) have silicide layers (50.1, 50.2).
所述多晶硅瓦片（14.1、14.2）具有硅化物层（50.1、50.2）。
We have a production line of organic chloride, silicide, nitride compounds and etc.
目前产品以有机卤化物、有机硅化物、氮化物系列产品为主。
The invention discloses a preparation method of magnesium silicide and a device thereof.
本发明公开了一种硅化镁的制备方法与装置。
The effect of oxygen impurity on silicide formation has been observed. Finally, the mecha…
观察到氧杂质对形成条件的影响，简单讨论了离子束混合形成硅化物的机理。
Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.
其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。
The metal silicide layer prepared by the method has high heat stability and controllable growth speed.
本发明方法制备的金属硅化物层热稳定性高，且生长速度可控。
The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.
半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。
The typical growth condition is also determined. The composition of titanium silicide films is analysed…
还确定了典型工艺条件，并用俄歇电子能谱分析了硅化钛膜的组分。
The precipitation of silicide may promote the intensity of slip and is the minor reason for the ductility loss.
而硅化物析出协同促进位错滑移集中化，是热稳定性下降的次要因素。
The effect of oxygen impurity on silicide formation has been observed. Finally, the mechanism on the formation of…
观察到氧杂质对形成条件的影响，简单讨论了离子束混合形成硅化物的机理。
The results show that the MOSFETs, with higher doping, thicker si film and silicide, have lower parasitic bipolar gain.
提高体区掺杂浓度、增加硅膜和硅化物厚度能够减小增益。
The solid by-product is obtained by imitating the magnesium silicide method which is used to produce silane in industry.
以硅化镁、氯化铵与液氨为原料，模仿硅化镁法制备硅烷气体的工艺，获得反应生成的固体副产物。
The conditions of forming tungsten silicide with As ion beam mixing have been studied by means of Rutherford backscattering.
本工作用卢瑟福背散射研究了离子束混合方法形成硅化钨的条件。
The invention is a preparation method of metal silicide film by microwave hydrogen plasma, relates to film preparation field.
一种微波氢等离子体制备金属硅化物薄膜的方法，用于薄膜制备领域。
The silicide may provide a template for crystallization, decreasing the defect density of the silicon and improving its conductivity.
硅化物可以提供用于结晶化的模板，降低了硅的缺陷密度并且提高了其导电性。
The invention discloses single-phase gadolinium-silicon compounds and the method for preparation, and relates to a rare earth silicide material.
本发明单相钆硅化合物以及制备方法，涉及稀土硅化物材料。
The invention belongs to the technical field of microelectronic devices, in particular to a method for forming ultrathin controllable metal silicide.
本发明属于微电子器件技术领域，具体为一种形成超薄可控的金属硅化物的方法。
And by the means of silicide, resist layer and aluminium multilayer metal lines, the questions of ohmic-contact and A1 electron mobility are resolved.
采用硅化物阻挡层和A1多层金属布线方法，解决了欧姆接触和铝的电迁移问题。
Polycrystalline nickel silicide film formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements.
本文研究了在薄二氧化硅层上快速热退火（RTA）形成的多晶硅化镍膜的电特性。
The invention discloses a forming method for metal silicide, which comprises the following steps of: providing a substrate with the surface having silicon material;
本发明公开了一种金属硅化物的形成方法，包括步骤：提供一表面含硅 材料的衬底；
Our company is a joint-stock company operated under the modern corporation system. we have a production line of organic chloride silicide nitride compounds and etc.
本公司是一家集医药中间体研发、生产、销售为一体的、按现代企业制度运作的股份企业。目前产品以有机卤化物、有机硅化物、氮化物系列产品为主。
Our company is a joint-stock company operated under the modern corporation system. We have a production line of organic chloride, silicide, nitride compounds and etc.
本公司是一家集医药中间体研发、生产、销售为一体的、按现代企业制度运作的股份企业。目前产品以有机卤化物、有机硅化物、氮化物系列产品为主。
The silicide layer formed at interface was thought to induce the in plane magnetic anisotropy in the sandwiches, which consequently resulted in the high field sensitivity of GMR.
这个硅化物界面层诱导了三明治膜的平面内磁各向异性，从而导致了易轴上高灵敏度巨磁电阻效应。
The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
硅化钛薄膜由于电阻率低和其它一些良好特性，在VLSI的栅电极和互连线中显示出它潜在的优势。
A second anneal is performed to convert the metal rich silicide phase formed by the two thermal cycles of the first anneal into a metal silicide (68) phase that is in its lowest resistance phase.
进行第二次退火以便将通过第一次退火的两次热循环形成的富金属硅化物相转化成处于其最低电阻相的金属硅化物(68)相。
A second anneal is performed to convert the metal rich silicide phase formed by the two thermal cycles of the first anneal into a metal silicide (68) phase that is in its lowest resistance phase.
进行第二次退火以便将通过第一次退火的两次热循环形成的富金属硅化物相转化成处于其最低电阻相的金属硅化物(68)相。
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