The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.
半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。
The source region and the drain region comprise a semiconductor junction mixedly formed by a Schottky junction and a P-N junction.
所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。
According to the nonlinear re-radiation characteristic of semiconductor PN node, the nonlinear node detection system for semiconductor junction targets based on second harmonic reception is designed.
根据非线性半导体p N结再辐射特性，设计了一种基于二次谐波接收的非线性节点探测系统。
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