The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.
半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。
The source region and the drain region comprise a semiconductor junction mixedly formed by a Schottky junction and a P-N junction.
所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。
According to the nonlinear re-radiation characteristic of semiconductor PN node, the nonlinear node detection system for semiconductor junction targets based on second harmonic reception is designed.
根据非线性半导体p N结再辐射特性，设计了一种基于二次谐波接收的非线性节点探测系统。
This paper analyzes the failure mechanism of semiconductor P N junction temperature sensors and presents a new design to reduce the internal stresses and methods to improve the processes.
通过失效形式，分析了半导体P-N结温度传感器的失效机理，介绍了为降低内应力而进行的设计和工艺改进。
Semiconductor diode is a PN junction together with the corresponding client leads and package composition shell.
二极管是由一个PN结加上相应的引出端并封装管壳构成的。
Semiconductor diodes bipolar junction transistors field-effect transistors transistor amplifiers frequency response operational amplifiers differential and multistage amplifiers integrated circuits.
半导体、二极体、双极电晶体、场效电晶体、电晶体放大器、频率响应、算放大器、差动及多极放大器、积体电路。
More particularly, the MTJ structure may be on the semiconductor substrate, and the digit line may be adjacent the magnetic tunnel junction structure.
更具体，MT J结构可以在半导体衬底上，以及数字线可以邻近磁隧道结结构。
The amplitude distribution of narrow hand semiconductor noise in junction type OC70, OC71 and point contact type 2N32A transistors were measured experimentally by the "maximum amplitude" method.
本文中描述用振幅峰值的方法，测量面接触型晶体管OC70，OC71和点接触型晶体管2N32A内窄频带低频率噪声的振幅分布。
A bipolar junction transistor relates to the technical field of a semiconductor power device.
双极结型晶体管，涉及半导体功率器件技术领域。
The liquid-junction solar cell is a device of converting solar energy into electric energy with the sensitized nano-particle semiconductor, which has low-cost and high-efficiency advantages.
液结太阳能电池利用敏化纳米半导体把太阳能转化为电能，具有价格低、效率高等优点，近年来已引起了越来越多研究者的广泛兴趣。
A magnetic random access memory device may include a semiconductor substrate, a magnetic tunnel junction (MTJ) structure, a contact plug, and a digit line.
提供用于操作包括存储单元的磁随机存取存储器件的方法，该存储单元具有在衬底上的磁隧道结结构的。
Solder film manufacturing method, heat sink furnished with solder film, and semiconductor-device-and-heat-sink junction.
焊料膜制造方法，装备有焊料膜的散热装置，以及半导体器件与散热装置的连接体。
Solder film manufacturing method, heat sink furnished with solder film, and semiconductor-device-and-heat-sink junction.
焊料膜制造方法，装备有焊料膜的散热装置，以及半导体器件与散热装置的连接体。
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