The asymptotic behavior of the drift diffusion model for semiconductor devices is studied.
研究半导体器件的漂移-扩散模型方程解的渐近性。
Introduction to semiconductor manufacturing technology including oxidation, diffusion, alloying, re-flow process, copper process and chemical-mechanical polishing.
半导体制程技术包括氧化、扩散、热处理、合金化、再流动制程、铜制程及化学机械研磨制程简介。
A first impurity diffusion layer, which occupies a space within the semiconductor substrate, is provided separately apart from the floating gate by a predetermined distance.
在浮栅的两侧壁上，设置侧壁绝缘膜。第一杂质扩散层设置在半导体基板内，并与浮栅仅离规定的距离。
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