The asymptotic behavior of the drift diffusion model for semiconductor devices is studied.
研究半导体器件的漂移-扩散模型方程解的渐近性。
Introduction to semiconductor manufacturing technology including oxidation, diffusion, alloying, re-flow process, copper process and chemical-mechanical polishing.
半导体制程技术包括氧化、扩散、热处理、合金化、再流动制程、铜制程及化学机械研磨制程简介。
A first impurity diffusion layer, which occupies a space within the semiconductor substrate, is provided separately apart from the floating gate by a predetermined distance.
在浮栅的两侧壁上，设置侧壁绝缘膜。第一杂质扩散层设置在半导体基板内，并与浮栅仅离规定的距离。
The uniqueness problem of the weak solutions of the time dependent drift diffusion model for semiconductor equation with avalanche term is considered.
研究带雪崩项的半导体漂移-扩散模型方程弱解的惟一性问题。
The hydrodynamic and the drift-diffusion models are the most widely used models to describe semiconductor devices today.
在所有描述半导体的数学模型中，流体动力学模型和漂移扩散模型是应用最广泛的模型。
The invention provides a semiconductor device which can increase heat diffusion efficiency generated by a plurality of semiconductor chips, and connects with a heat diffusion path reliably.
本发明提供一种半导体装置，提高了从多个半导体芯片产生的热的扩散效率，并可靠地与散热路径连接。
The invention provides a semiconductor device which can increase heat diffusion efficiency generated by a plurality of semiconductor chips, and connects with a heat diffusion path reliably.
本发明提供一种半导体装置，提高了从多个半导体芯片产生的热的扩散效率，并可靠地与散热路径连接。
应用推荐