The self heating effects in integrated circuits greatly impact circuit performance and power consumption.
自热效应对集成电路的性能和功耗有很大的影响。
The results of negative resistance effect and transient characteristics of a SOI structure prove that the program can correctly simulate the main phenomena caused by self heating effect.
对一个SOI结构的负阻效应和瞬态特性的模拟结果表明,该程序能够正确模拟器件发热情况以及自热对器件特性的主要影响。
The computing formula of the self-heating and combustion heat release source in the coupled models has been set up.
给出了定量确定耦合模型中自热自燃源项的计算式;
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