SCR的I-V曲线中二次崩溃对ESD性能的影响-现代电子技术 关键词:静电放电; SCR; I-V曲线; 二次崩溃 [gap=810]Keywords: ESD; SCR; IV curve; second breakdown
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forward second breakdown 正向二次击穿
second breakdown current 二次击穿电流
forward biased second breakdown 正向偏压二次击穿
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The development of the test instrument for forward-biased second breakdown for characteristics of power transistors (GIR) is described and main parameters are given.
本文对功率晶体管(GTR)正偏二次击穿测试仪的研制进行了说明,并给出了主要技术参数。
Even among those who had learnt to treat their bodies as insightful advisers, a significant number experienced a second breakdown within the first year at their new jobs.
即使是那些已经学会把身体视为有洞察力顾问的人,也有相当一部分人在进入新工作后的第一年内经历第二次崩溃。
Second breakdown mechanisms of bipolar power transistor is summarized.
概述了双极功率晶体管二次击穿机理。
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