The development of the test instrument for forward-biased second breakdown for characteristics of power transistors (GIR) is described and main parameters are given.
本文对功率晶体管(GTR)正偏二次击穿测试仪的研制进行了说明，并给出了主要技术参数。
Even among those who had learnt to treat their bodies as insightful advisers, a significant number experienced a second breakdown within the first year at their new jobs.
即使是那些已经学会把身体视为有洞察力顾问的人，也有相当一部分人在进入新工作后的第一年内经历第二次崩溃。
Second breakdown mechanisms of bipolar power transistor is summarized.
概述了双极功率晶体管二次击穿机理。
Second breakdown mechanisms of bipolar power transistor is summarized.
概述了双极功率晶体管二次击穿机理。
应用推荐