SCR的I-V曲线中二次崩溃对ESD性能的影响-现代电子技术 关键词:静电放电; SCR; I-V曲线; 二次崩溃 [gap=810]Keywords: ESD; SCR; IV curve; second breakdown
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second breakdown current 二次击穿电流
forward second breakdown 正向二次击穿
forward biased second breakdown 正向偏压二次击穿
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Second breakdown mechanisms of bipolar power transistor is summarized.
概述了双极功率晶体管二次击穿机理。
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
有两个限制了晶体管的处理能力,功耗:平均交界处的温度和二次击穿。
The results show the plasma density is not completely lost during current reversal, therefore, there were no need for second breakdown after the current reversal.
结果发现:在电流过零处,等离子体未完全熄灭,使得电流转换后不需要第二次击穿。
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