The first gate is separated from the second gate.
第一栅极与第二栅极分离。
The first gate and the second gate are separately disposed on the substrate.
第一栅极及第二栅极分开配置于所述基底上。
The transistor gate may be formed from first and second gate conductors with different work functions.
晶体管栅极可以由具有不同功函数的第一栅极导体和第二栅极导体形成。
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