quasi saturation 准饱和
The research of LDMOS current characteristic involves the linear current region, cut-off saturation region, quasi-saturation region and providing the simplified analytical expression.
LDMOS电流特性的研究涉及了器件电流线性区、夹断饱和区和准饱和区,并给出了简化的电流特性解析表达式。
The results show that many properties of quasi-state modes, such as the localization length, will influence the saturation effects of the random laser system.
结果显示,准态模式的某些特征参数,例如局域程度,将会影响系统的饱和特性。
The unique features of DMOS such as quasi-saturation, non-uniformly doped channel, and temperature dependencies are accurately modeled.
该物理模型考虑了高压dmos器件的准饱和特性、沟道非均匀掺杂特性和温度效应。
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