The research of LDMOS current characteristic involves the linear current region, cut-off saturation region, quasi-saturation region and providing the simplified analytical expression.
LDMOS电流特性的研究涉及了器件电流线性区、夹断饱和区和准饱和区，并给出了简化的电流特性解析表达式。
The results show that many properties of quasi-state modes, such as the localization length, will influence the saturation effects of the random laser system.
结果显示，准态模式的某些特征参数，例如局域程度，将会影响系统的饱和特性。
The unique features of DMOS such as quasi-saturation, non-uniformly doped channel, and temperature dependencies are accurately modeled.
该物理模型考虑了高压dmos器件的准饱和特性、沟道非均匀掺杂特性和温度效应。
In small size power VDMOS transistors, the cause of quasi-saturation effect has been investigated and simulated by software.
分析了功率VDMOS晶体管在小尺寸时准饱和效应的成因，并对其进行了理论证明和模拟验证。
In moderate field region, traps can be filled by both FN current and direct tunneling of electron into the traps. It results in a quasi-saturation in the leakage current.
在中等电场区域，注入电子能通过FN电流和直接隧穿到达能被填充的陷阱，从而使漏电流产生准态饱和。
In moderate field region, traps can be filled by both FN current and direct tunneling of electron into the traps. It results in a quasi-saturation in the leakage current.
在中等电场区域，注入电子能通过FN电流和直接隧穿到达能被填充的陷阱，从而使漏电流产生准态饱和。
应用推荐