利用一次光刻和多次注入,既做出了LDMOS的体区,又实现了线性梯度漂移区,同时为了增强RESURF(降低表面电场)效果,也在靠近源端的漂移区下方,做有与漂移区掺杂类型相反的杂质(通过在敷设掩膜层之前的普注实现),从而获得较高的击穿电压和...
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Double-Resurf 双减少表面场
double RESURF 双重降低表面电场
RESURF criterion RESURF判据
RESURF structure RESURF结构
RESURF principle RESURF原理
RESURF结构 RESURF structure
RESURF Technology RESURF技术
This analysis model is available for the design of step drift doping profile RESURF device and linearly-graded drift RESURF device.
该模型可用于薄外延阶梯掺杂和线性掺杂漂移区RESURF器件的设计优化。
The application of ADI and high-order compact finite difference method to the breakdown voltage analysis of thin film SOI RESURF structure.
采用ADI与高阶紧致差分相结合的方法计算薄膜soi RESURF结构击穿电压。
In the prior art, the requirement of further improving LDMOS breakdown voltage can not be satisfied by only using the LDMOS self structure to conform to an RESURF principle singly.
现有技术中仅利用LDMOS本身的结构来单次符合RESURF原理无法满足进一步提高LDMOS击穿电压的需求。
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