This analysis model is available for the design of step drift doping profile RESURF device and linearly-graded drift RESURF device.
该模型可用于薄外延阶梯掺杂和线性掺杂漂移区RESURF器件的设计优化。
The application of ADI and high-order compact finite difference method to the breakdown voltage analysis of thin film SOI RESURF structure.
采用ADI与高阶紧致差分相结合的方法计算薄膜soiRESURF结构击穿电压。
In the prior art, the requirement of further improving LDMOS breakdown voltage can not be satisfied by only using the LDMOS self structure to conform to an RESURF principle singly.
现有技术中仅利用LDMOS本身的结构来单次符合RESURF原理无法满足进一步提高LDMOS击穿电压的需求。
In the prior art, the requirement of further improving LDMOS breakdown voltage can not be satisfied by only using the LDMOS self structure to conform to an RESURF principle singly.
现有技术中仅利用LDMOS本身的结构来单次符合RESURF原理无法满足进一步提高LDMOS击穿电压的需求。
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