氨电浆会轻微地氮化经研磨过后HSQ薄膜的表面，这层薄氮化层会防止在经化学机械研磨后(post-CMP) 薄膜的水份吸收。因此，氨电浆可以有效地恢复在化学机械研磨后损坏的介电特性。
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The use of different barrier slurries for copper chemical mechanical planarization CMP creates a challenge for post-CMP cleaning.
铜化学机械平面化不同阻挡层浆料的应用引起了铜CMP后清洗的问题。
We have to face some Cu line issues after we use Cu to replace AL, such as the reliability with Cu and low K dielectric, and post-CMP (Chemical Mechanical Polishing) Cu line voids defect.
在引入电镀铜工艺的同时我们也不得不面对一些铜线工艺所特有的缺陷，如铜线和低K值介电质可靠性问题，以及电镀铜后产生的孔洞缺陷等问题。
The selectivity, the chemical and mechanical function's matching, the storage of the slurry and post CMP cleaning ULSI inlaid tungsten CMP have been studied in this article.
研究的是ULSI镶嵌钨CMP的选择性，化学与机械作用匹配，浆料的悬浮及存放和后清洗等问题。
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