...区域的一深阱区被隔离开来，以及该隔离薄膜比在该单元区域的一隔离薄膜要厚些，以便不会产生一寄生晶体管(Parasitic transistor)及可防止一漏电流。
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lateral parasitic transistor [电子] 横向寄生晶体管
Parasitic c transistor 寄生晶体管
parasitic MOS transistor 寄生金属氧化物半导体晶体管
parasitic bipolar transistor effect 寄生双极晶体管效应
parasitic bipolar transistor effec t 寄生双极晶体管效应
We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.
本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS 漂移区中的电场分布。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.
最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究。
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