We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.
本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.
最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究。
The results show that the effect of the parasitic PNP, transistor;. Is so serious under the condition of thin epitaxy that it can not be neglected even if the technology of doping gold is used.
结果指出，在薄外延条件下，寄生pnp效应严重，即使采用掺金工艺，寄生pnp效应也不能忽略不计。
The results show that the effect of the parasitic PNP, transistor;. Is so serious under the condition of thin epitaxy that it can not be neglected even if the technology of doping gold is used.
结果指出，在薄外延条件下，寄生pnp效应严重，即使采用掺金工艺，寄生pnp效应也不能忽略不计。
应用推荐