p type semiconductor p型半导体
Direct-gap p semiconductor 直接带隙半导体
p-n-p semiconductor triode PNP半导体三极管
P-type semiconductor P型半导体 ; 空穴型半导体 ; 空穴半导体
p-n junction semiconductor laser 结半导体激光器 ; PN结半导体激光器
N-P-N type semiconductor triode NPN型半导体三极管
P-channel metal oxide semiconductor P沟道金属氧化物半导体
This paper analyzes the failure mechanism of semiconductor P N junction temperature sensors and presents a new design to reduce the internal stresses and methods to improve the processes.
通过失效形式，分析了半导体P-N结温度传感器的失效机理，介绍了为降低内应力而进行的设计和工艺改进。
Amutual pulse injection-seeding scheme is developed to generate tunable dual-wavelength optical short pulses by the use of two gain-switched fabry-perot (F-P) semiconductor lasers.
报道了两个增益开关调制的法布里珀罗半导体激光器互注入锁定实验方案，可产生双波长可调谐光脉冲。
A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
一种半导体器件结构（10），其使用两个半导体层（16&20）以 分别优化N和P沟道晶体管载流子迁移率。
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