This paper analyzes the failure mechanism of semiconductor P N junction temperature sensors and presents a new design to reduce the internal stresses and methods to improve the processes.
通过失效形式，分析了半导体P-N结温度传感器的失效机理，介绍了为降低内应力而进行的设计和工艺改进。
Amutual pulse injection-seeding scheme is developed to generate tunable dual-wavelength optical short pulses by the use of two gain-switched fabry-perot (F-P) semiconductor lasers.
报道了两个增益开关调制的法布里珀罗半导体激光器互注入锁定实验方案，可产生双波长可调谐光脉冲。
A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
一种半导体器件结构（10），其使用两个半导体层（16&20）以分别优化N和P沟道晶体管载流子迁移率。
P-type semiconductor zinc oxide films, process for preparation thereof, and pulsed laser deposition method using transparent substrates.
型半导体氧化锌薄膜，其制备方法，和使用透明基片的脉冲激光沉积方法。
A newly developed instrument for detecting spectra and P-I characteristics of semiconductor lasers is presented in this paper.
介绍了一种检测半导体激光器光谱特性和P - I特性的仪器系统。
High mobility P-channel power metal oxide semiconductor field effect transistors.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
The smallest unit that supports electron flow in a semiconductor material ; a hole in P-type silicon or a free electron in N-type silicon.
多数载流子-一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
The source region and the drain region comprise a semiconductor junction mixedly formed by a Schottky junction and a P-N junction.
所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。
The source region and the drain region comprise a semiconductor junction mixedly formed by a Schottky junction and a P-N junction.
所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。
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