over-etching 过份蚀刻
Outer over etching 外层蚀刻过度
Inner over etching 内层蚀刻过度
Metal Over-Etching 金属过刻
polysilicon over-etching 多晶硅刻蚀
The third stage etching in current method is a time-fixed etching, which easily causes under etching or over etching of the metal layer.
现有的刻蚀形成金属线时的第三阶段刻蚀采用了固定时间的刻蚀，极易造成金属层刻蚀不足或过刻蚀的问题。
The influence on over etching and under etching to IC layout is analyzed, the computation model and realization method of IC critical area are presented.
论文在分析过刻蚀和欠刻蚀对IC版图影响的基础上，提出了基于工艺偏差影响的IC关键面积计算新模型和实现方法。
Experimental results show that the polishing process includes the steps of etching, brightening and over-etching. The mechanism are also discussed.
结果表明，黄铜的化学抛光包括浸蚀、光亮和过腐蚀三个阶段，同时对黄铜化学抛光机理也进行了探讨。
应用推荐