石墨烯基电子学研究进展 关键词: GaN;氮化层;GaAs;氢化物气相外延(HVPE) ;XRD [gap=1420]Key words:GaN;nitride layer;GaAs;HVPE;XRD
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nano-nitride-layer 纳米氮化层
white nitride layer 渗氮白层
molybdenum nitride layer 钼氮改性层
thickness of nitride layer 渗层厚度
An aluminium nitride layer proves to be much more homogeneous and its sensitivity, in the 602 to 720 GHz range, is also much improved.
在602 ~ 720ghz频率范围内,氮化铝具有更好的均匀性、更高的灵敏度和良好的性能。
The invention provides a resistivity switching metal oxide or nitride layer capable of reaching at least two stable resistivity states.
本发明提供一种可达到至少两个稳定的电阻率状态的电阻率切换金属氧化物或氮化物层。
It shows severe hump without capping silicon nitride layer due to moisture diffusion during thermal anneal after inter layer oxide deposition by LPCVD.
它表明没有覆盖硅氮化层的严重驼峰取决于经过LPCVD的内部涂层氧化沉淀后化学处理期间的湿度扩散。
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