An aluminium nitride layer proves to be much more homogeneous and its sensitivity, in the 602 to 720 GHz range, is also much improved.
在602 ~ 720ghz频率范围内，氮化铝具有更好的均匀性、更高的灵敏度和良好的性能。
An oxide layer may be between the silicon nitride layer and the surface of the silicon carbide layer.
在该氮化硅层和碳化硅层表面之间可以有氧化物。
The invention provides a resistivity switching metal oxide or nitride layer capable of reaching at least two stable resistivity states.
本发明提供一种可达到至少两个稳定的电阻率状态的电阻率切换金属氧化物或氮化物层。
The principal mechanism of formation of silicon nitride layer on iron surface is described, and variety of production processes and influence factors are reviewed.
综述了钢铁表面形成氮化硅薄膜的基本过程，各种制备方法、特点及影响因素。
The invention discloses an etching stopping layer comprising a nitrogenous silicon carbide layer formed on a substrate and a silicon nitride layer formed on the silicon carbide layer.
本发明公开了一种刻蚀停止层，包括在衬底上形成的含氮的碳化硅 层，以及位于所述碳化硅层之上的氮化硅层。
Each chip is provided with conformal doped silicon glass layers which are covered on the silicon nitride layer and are covered on the gate structure and which have predetermined thickness.
每个所述芯片具有覆盖在所述氮化硅层和所述栅极结构上的具有预定厚度的共形的掺杂硅玻璃层。
The nitride layer was formed on the surface of ductile cast iron by gas multi-element penetration, and the phase structure and section appearance of nitride layer were analyzed by the XRD and SEM.
球墨铸铁经过气体多元共渗后可在其表面形成氮化层，通过X射线衍射和扫描电镜对渗层的相结构与形貌进行分析。
Both of the right and left charge storage regions having a thin oxide layer on the semiconductor substrate, a nitride layer on the thin oxide layer and an insulating oxide layer on the nitride layer.
左和右电荷存储区都具有半导体衬底上的薄氧化物层、薄氧化物层上的氮化物层和氮化物层上的绝缘氧化物层。
Both of the right and left charge storage regions having a thin oxide layer on the semiconductor substrate, a nitride layer on the thin oxide layer and an insulating oxide layer on the nitride layer.
左和右电荷存储区都具有半导体衬底上的薄氧化物层、薄氧化物层上的氮化物层和氮化物层上的绝缘氧化物层。
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