The investigated results are very important for the research and fabrication of the MOS structure gas sensors.
研究结果对于MOS结构的半导体气敏传感器的研制具有重要的意义。
The stability and composition of oxidic film and the C-V characteristics of MOS structure have also been tested and analysed theoretically in this paper.
对氧化膜的组分和稳定性，以及MOS结构的C—V特性进行了实际测量和理论分析。
Besides, in order to minimize the area of output driving MOSFET, high W/L density structure is adopted with effective W/L density being doubled compared with normal MOS structure.
此外还研究了高宽长比功率驱动MOS晶体管的版图优化设计，通过采用高密度的版图结构使有效宽长比密度提高了一倍，从而使其占用的版图面积为缩小为原来的一半。
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