The investigated results are very important for the research and fabrication of the MOS structure gas sensors.
研究结果对于MOS结构的半导体气敏传感器的研制具有重要的意义。
The stability and composition of oxidic film and the C-V characteristics of MOS structure have also been tested and analysed theoretically in this paper.
对氧化膜的组分和稳定性，以及MOS结构的C—V特性进行了实际测量和理论分析。
In this paper an analytical expression of the ct transient response curve of a MOS structure has been derived under the condition that the surface generation rate can be regarded a constant.
在将表面产生速度看作常数的条件下，本文导出了MOS结构对阶跃电压瞬态响应曲线的解析表达式。
In this paper an analytical expression of the ct transient response curve of a MOS structure has been derived under the condition that the surface generation rate can be regarded a constant.
在将表面产生速度看作常数的条件下，本文导出了MOS结构对阶跃电压瞬态响应曲线的解析表达式。
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