enhancement MOS device 增强型金氧半导体装置
characterization of MOS device MOS器件表征
bipolar mos device 双极金属氧化物半导体器件
elementary mos device 分立金属氧化物半导体器件
ion implanted mos device 离子注入金属氧化物半导体器件
submicron scale mos device 亚微米尺寸金属氧化物半导体器件
power mos device 功率mos器件
offset-gate mos device 偏移栅mos器件
thick oxide mos device 厚氧化层金属氧化物半导体器件
floating-gate MOS device 浮栅金属氧化物半导体器件
Thus, the radiation response of MOS device can be significantly changed.
这样，已能有效地改变MOS器件的抗辐照性能。
Therefore, the test of electrostatic discharge has already been an important item in the evaluation of the MOS device′s reliability.
因此，静电放电测试已经成为对器件可靠性评估的一个重要项目。
With the rapid scaling down of MOS devices, the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling.
随着器件尺寸的迅速减小，直接隧穿电流将代替FN电流而成为影响器件可靠性的主要因素。
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