Thus, the radiation response of MOS device can be significantly changed.

这样，已能有效地改变MOS器件的抗辐照性能。

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Therefore, the test of electrostatic discharge has already been an important item in the evaluation of the MOS device′s reliability.

因此，静电放电测试已经成为对器件可靠性评估的一个重要项目。

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With the rapid scaling down of MOS devices, the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling.

随着器件尺寸的迅速减小，直接隧穿电流将代替FN电流而成为影响器件可靠性的主要因素。

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