Therefore, the test of electrostatic discharge has already been an important item in the evaluation of the MOS device′s reliability.
因此，静电放电测试已经成为对器件可靠性评估的一个重要项目。
With the rapid scaling down of MOS devices, the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling.
随着器件尺寸的迅速减小，直接隧穿电流将代替FN电流而成为影响器件可靠性的主要因素。
The bulk potential modulator can realize real-time modulation to parameters of the target MOS device, thus greatly weakening the influence of technological deviation.
体电位调制器能够实现对目标MOS器件参数的实时调制，极大地减弱了工艺偏差的影响。
The bulk potential modulator can realize real-time modulation to parameters of the target MOS device, thus greatly weakening the influence of technological deviation.
体电位调制器能够实现对目标MOS器件参数的实时调制，极大地减弱了工艺偏差的影响。
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