dual-layer polysilicon 双层多硅晶体
double layer polysilicon 双层多晶硅
polysilicon layer 多晶硅层
The device utilizes three phase construction with the technology of buried channel and three layer polysilicon.
该器件为三相结构，采用埋沟和三层多晶硅技术。
The device utilizes three-phase construction, with the technology of buried-channel and four-layer polysilicon.
该器件采用三相结构，埋沟和四层多晶硅技术。
Portions of the oxide layer are removed to substantially planarize the trench-filled oxide layer as the first polysilicon layer.
所述氧化层的部分被移除，以使所述沟槽填充的氧化层作为第一多晶硅层基本平面化。
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