The device utilizes three phase construction with the technology of buried channel and three layer polysilicon.
该器件为三相结构，采用埋沟和三层多晶硅技术。
The device utilizes three-phase construction, with the technology of buried-channel and four-layer polysilicon.
该器件采用三相结构，埋沟和四层多晶硅技术。
The device utilizes three-phase construction, with the technology of buried-channel and four-layer polysilicon.
该器件采用三相结构，埋沟和四层多晶硅技术。
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