the interface state 界面陷阱电荷
fast-interface-state loss 快速界面态损失
fast-interface-state capture 快速界面态俘获
interface-state 界面态
interface state type 接口类型
oxide interface state 氧化硅界面态
interface state charge 界面态电荷
member-interface-state 集群成员端口的状态
The producing process of the interface state at the total ion dose is primely analyzed using the interface state model.
该界面态产生模型能较好的阐述现今电离辐照下界面态产生的过程。
参考来源 - 非均匀沟道DMOS基本参数及其辐照理论的研究It is the reducing of the interface state densities by NH_3 plasma pretreatment and subsequent annealing at a proper temperature that resulted in the enhancement of the EL intensity.
原因是电致发光时,Si衬底与SiN_x薄膜之间的界面态可能成为载流子的束缚中心,进而降低载流子的注入效率及发光强度,通过NH_3等离子体预处理,并经适当温度的热处理可以有效降低该界面态密度,从而使发光增强。
参考来源 - 富硅氮化硅薄膜的光电性能研究·2,447,543篇论文数据，部分数据来源于NoteExpress
The interface state density of poly-Si thin film was reduced and the properties of poly-Si thin film transistors were improved using this technique.
实验结果表明，该技术能够有效降低多晶硅薄膜的界面态密度，提高多晶硅薄膜晶体管性能。
According to defect chemistry of BaTiO3 semiconducting ceramics, the composition of the interface state was researched. Amethod of the interface state density measurement was proposed.
同时对钛酸钡系ptcr半导瓷界面态的组成进行了研究，并提出一种直接测量界面态密度的方法。
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