... fast-interface-state loss 快速界面态损失 the interface state 界面陷阱电荷 interface state density 态密度 ...
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The interface state density of poly-Si thin film was reduced and the properties of poly-Si thin film transistors were improved using this technique.
实验结果表明,该技术能够有效降低多晶硅薄膜的界面态密度,提高多晶硅薄膜晶体管性能。
It shows that the bias in the post-irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate.
压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率。
Next, we'll create the interface associated with the state diagram.
接下来我们将创建与状态关系图关联的接口。
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