radiation induced defects 辐照感生缺陷
radiation-induced defects 辐照缺陷
irradiation-induced defects 辐照缺陷
irradiation induced-defects 辐射缺陷
electron irradiation-induced defects 电子辐照缺陷
Chemically Induced Birth Defects 化学物质产生的出生缺陷
The induced defects by radiation are mainly duel vacancies, and the irradiated devices work stably and reliably.
辐照造成的缺陷主要为双空位。辐照器件工作稳定可靠。
The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.
研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。
In this paper, oxygen precipitates and induced defects in annealed dislocation-free CZ-Si with high oxygen content have been investigated by HVEM.
本文用超高压透射电子显微镜研究退火的高氧含量无位错直拉硅单晶中氧沉淀和诱生缺陷。
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