The induced defects by radiation are mainly duel vacancies, and the irradiated devices work stably and reliably.
辐照造成的缺陷主要为双空位。辐照器件工作稳定可靠。
The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.
研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。
In this paper, oxygen precipitates and induced defects in annealed dislocation-free CZ-Si with high oxygen content have been investigated by HVEM.
本文用超高压透射电子显微镜研究退火的高氧含量无位错直拉硅单晶中氧沉淀和诱生缺陷。
Because the quantitative analysis of oxygen can't be done by general equipment, it is still lack of systematically investigation of precipitates and induced defects in heavily doped Cz-si.
但由于重掺硅中氧浓度定量测试受到方法限制，重掺硅单晶氧沉淀及其诱生缺陷至今未得到全面而深入地研究。
The relationship between the annealing temperatures and the hydrogen-induced defects in floating zone silicon grown in hydrogen atmosphere has been investigated by X-ray section topography.
本文应用X射线透射截面形貌技术研究了氢气区熔硅单晶中氢致缺陷与热处理温度的关系。
The experimental results showed that high density of oxygen precipitation and induced-defects were formed after annealing of wafers at moderate and high temperatures.
重掺砷硅单晶在中高温退火时形成密度较高的氧沉淀及诱生缺陷。
The experimental results showed that high density of oxygen precipitation and induced-defects were formed after annealing of wafers at moderate and high temperatures.
重掺砷硅单晶在中高温退火时形成密度较高的氧沉淀及诱生缺陷。
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