At first we analyze the working mode and equivalent circuit of the encapsulated IMPATT diode, by use of the MatLab software.
首先分析了雪崩二极管的工作方式及其等效电路，利用MATLAB软件对二极管封装后的等效参数进行了编程计算。
参考来源 - 三毫米波集成振荡器研究·2,447,543篇论文数据，部分数据来源于NoteExpress
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After this, we analyzed and computed several microstrip resonators with ADS, making impedance match between the resonator and IMPATT diode.
然后利用ADS软件对几种微带谐振器进行了分析和计算，使雪崩二极管的负载阻抗与其匹配。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
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