After this, we analyzed and computed several microstrip resonators with ADS, making impedance match between the resonator and IMPATT diode.
然后利用ADS软件对几种微带谐振器进行了分析和计算，使雪崩二极管的负载阻抗与其匹配。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
After this, we analyzed and computed several microstrip resonators with ADS, making impedance match between the resonator and IMPATT diode. At the same time, we simulate the transition with HFSS.
然后利用ADS软件对几种微带谐振器进行了分析和计算，使雪崩二极管的负载阻抗与其匹配。
After this, we analyzed and computed several microstrip resonators with ADS, making impedance match between the resonator and IMPATT diode. At the same time, we simulate the transition with HFSS.
然后利用ADS软件对几种微带谐振器进行了分析和计算，使雪崩二极管的负载阻抗与其匹配。
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