Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
H-gate devices were fabricated on SIMOX substrates with different thickness of BOX.
在埋氧化层厚度不同的SIMOX衬底上制备了H型栅结构器件。
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