H-gate devices were fabricated on SIMOX substrates with different thickness of BOX.
在埋氧化层厚度不同的SIMOX衬底上制备了H型栅结构器件。
Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
East downtown began its transition to a semi-residential neighbourhood in 1997 when the MCI Center (now the Verizon Center) opened one block from the Chinatown gate on 7th and H Streets.
东部城区向半住宅区的转变始于1997年。 当时，MCI中心（如今的Verizon中心）在距离唐人街牌楼（第七街和H街交接处）一个街区的地方开张了。
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